InsulatedGate Bipolar Transistor (IGBT) is a power semiconductor device and
majorly finds application in switch, pulse modulation and phase
control among others. This device competes with other power
semiconductor devices including power MOSFETs, Silicon-Carbide (SiC),
Gallium-Nitride (GaN). IGBT has been gaining demand owing to lower
switching losses and higher reliability, which highlights features
including higher efficiency and better thermal performance. The
increasing focus and increased investments in R&D on IGBT chip
and module optimization to reduce power consumption, improve chip
density, thermal resistivity and efficiency would further strengthen
the position of IGBT power semiconductor market.
IGBT
is sold either as discrete device or as a module. The major
applications of IGBT include motor drives, inverters, uninterruptible
power supply (UPS), electric and hybrid electric vehicles (EV/HEV),
industrial systems, consumer electronics, and medical devices. Green
energy sector including wind turbines and solar photovoltaic (PV) in
particular gaining significant growth in demand driven by rapid
growth in green energy market itself that is leading to more wind
turbine installations and more PV inverters being sold. Moreover,
demand for EV/HEV is gaining significant traction and is expected to
lead to high growth of IGBT market in coming future.
Over
the coming years, the replacement of aging power infrastructure in
developed regions and increased demand for smart grids would further
boost the demand of IGBT and represents a significant opportunity. A
major challenge to growth of IGBT is higher cost of the device as
compared to power MOSFETs. Europe was the leading market for IGBT
followed by Asia Pacific. North America is witnessing significant
growth in demand owing to growth of green energy and EV/HEV markets.
Some
of the key players in IGBT market include Infineon Technologies AG,
Fujitsu Ltd., NXP Semiconductors N.V., STMicroelectronics N.V.,
Toshiba Corporation, Vishay Intertechnology, Inc., Renesas
Electronics Corporation, ROHM Co. Ltd., Fairchild Semiconductor
International, Inc., and Fuji Electric Co. Ltd among others.
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